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| FMM5052ZE MMIC Power Amplifier FEATURES * Wide Frequency Band: 0.8 to 2.7GHz * Medium Power: P1dB=26dBm (Typ.) @ f=0.8 - 2.7GHz * High Linear Gain: GL=19dB (Typ.) @ f=0.8 - 2.7GHz * Impedance Matched Zin/Zout = 50 * Wide Operating Temperature Range * Small Size: SSOP-16 Plastic Package for SMT Applications DESCRIPTION The FMM5052ZE is a MMIC power amplifier that includes a three-stage amplifier, internally matched, for broadband applications in the 0.8 to 2.7GHz frequency range. This product is uniquely suited for use in cellular, W-CDMA/PCS, MMDS, and WLL base station amplifiers as it offers high gain, long term reliability and ease of use. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25C) Item DC Input Voltage DC Input Voltage Input Power Storage Temperature Operating Case Temperature Symbol VDD1,2 VGG1,2 Pin Tstg Top Rating 10 -8 15 -55 to +125 -40 to +85 Unit V V dBm C C RECOMMENDED OPERATING CONDITIONS (Case Temperature Tc=25C) Item DC Input Voltage Gate Current Symbol VDD VGG Limit 8 -3 Unit V V ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25C) Item Frequency Range Output Power at 1dB G.C.P. Linear Gain Gain Flatness Input Return Loss DC Input Current DC Input Current CASE STYLE: ZE Symbol f P1dB GL G RLin IDD IGG Test Conditions Min. Limit Typ. Max. 0.8 - 2.7 26.0 19.0 1.0 -12 220 -2.0 1.5 300 - Unit GHz dBm dB dB dB mA mA 25.0 VDD1, 2=8V, VGG1, 2=-3V, Pin=-5dBm 17.0 VDD1, 2=8V, VGG1, 2=-3V -4.0 G.C.P.: Gain Compression Point Edition 1.0 May 2003 FMM5052ZE MMIC Power Amplifier OUTPUT POWER vs. FREQUENCY OUTPUT POWER vs. INPUT POWER 30 VDD=8V VGG=-3V 0.8GHz 2.0, 2.7GHz Output Power (dBm) 30 28 26 24 22 20 18 16 14 VDD=8V VGG=-3V 28 26 Pin=10dBm 8dBm P1dB 6dBm Output Power (dBm) 24 22 20 18 16 14 12 2dBm 2dBm 5dBm 0.5 1 1.5 2 2.5 3 -8 -4 0 4 8 12 Frequency (GHz) Input Power (dBm) OUTPUT POWER vs. IMD -24 -28 -32 RECOMMENDED TEST CIRCUIT VDD1 VDD2 1000pF 1000pF VDD=8V VGG=-3V fo = 0.8GHz 2.0GHz 2.7GHz f=+10MHz 2-tone test IMD (dBc) -36 -40 -44 -48 -52 -56 -60 IM3 1000pF 56nH 20pF IM5 1000pF 1000pF 10 12 14 16 18 20 22 24 26 VGG1 VGG2 Total Output Power (dBm) 2 FMM5052ZE MMIC Power Amplifier S-PARAMETERS VDD = 8V, VGG = -3V S21 S12 MAG ANG MAG ANG 9.543 9.710 9.848 9.940 10.063 10.138 10.245 10.328 10.421 10.497 10.604 10.721 10.821 10.883 10.957 11.049 11.062 10.939 10.977 11.100 11.073 10.992 10.737 10.615 10.089 9.953 9.239 8.539 6.986 6.272 5.057 -16.7 -25.6 -33.8 -41.8 -49.6 -57.0 -64.6 -72.0 -79.7 -87.3 -94.9 -102.7 -110.9 -119.0 -127.6 -136.2 -145.6 -154.0 -162.9 -172.4 178.6 168.0 156.8 145.6 134.2 120.2 108.4 90.7 78.0 65.4 53.1 0.014 0.014 0.013 0.013 0.013 0.012 0.012 0.012 0.011 0.012 0.011 0.011 0.010 0.010 0.009 0.009 0.007 0.006 0.007 0.006 0.004 0.004 0.007 0.009 0.007 0.007 0.007 0.009 0.011 0.012 0.013 -14.9 -16.8 -22.9 -24.0 -29.2 -29.4 -32.8 -35.5 -37.7 -41.6 -56.2 -52.0 -61.3 -65.1 -66.5 -79.4 -91.3 -87.9 -102.4 -124.6 -125.3 -145.4 -169.0 174.6 149.2 157.1 136.2 126.4 126.4 112.2 97.1 FREQUENCY (MHZ) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 3300 3400 3500 S11 MAG 0.085 0.035 0.016 0.047 0.078 0.107 0.132 0.156 0.174 0.191 0.204 0.219 0.225 0.228 0.226 0.220 0.206 0.206 0.198 0.184 0.169 0.161 0.184 0.226 0.300 0.352 0.446 0.555 0.648 0.747 0.808 S22 MAG 0.269 0.221 0.180 0.149 0.123 0.104 0.084 0.071 0.057 0.047 0.040 0.030 0.029 0.031 0.040 0.061 0.092 0.108 0.129 0.167 0.204 0.249 0.290 0.330 0.359 0.396 0.428 0.460 0.456 0.413 0.442 ANG -83.4 -75.6 22.1 54.4 56.0 55.3 51.9 48.4 44.6 40.3 36.0 31.8 27.2 22.7 19.6 16.9 15.6 17.8 17.7 18.5 25.8 38.1 53.0 63.3 64.7 67.5 67.5 64.5 57.6 50.7 42.6 ANG 114.8 112.5 111.2 110.7 111.2 112.7 114.2 113.8 117.5 116.0 115.4 111.4 102.6 85.6 69.4 50.0 29.5 17.5 14.0 9.6 6.4 0.1 -5.5 -11.4 -18.3 -22.7 -28.5 -35.3 -46.5 -43.3 -48.4 3 FMM5052ZE MMIC Power Amplifier Case Style "ZE" 6.400.5 0.700.3 5.00 1.5 (0.5) 0.65 (0.2) 0.700.3 1 16 4.55 REF 5.50 0.220.1 8 9 (2.7) LEAD ASSIGNMENT Lead 1. 2. 3. 4. 5. 6. 7. 8. Symbol NC NC NC VDD1 RFin NC NC NC Lead 9. 10. 11. 12. 13. 14. 15. 16. Symbol NC NC NC VGG1 VGG2 RFout/VDD2 NC NC 0.250.1 +0.20 1.1 -0.10 Unit: mm Note: 1. The dimensions in parenthesis do not include resin burrs. 2. Unless otherwise specified, the dimensional tolerance should be 0.15mm. For further information please contact: CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 FUJITSU QUANTUM DEVICES TD. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL: +81-55-275-4411 FAX: +81-55-275-9461 FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 (c) 2003 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. 4 (2.7) |
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